期刊
MICRO & NANO LETTERS
卷 7, 期 1, 页码 20-23出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/mnl.2011.0576
关键词
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The authors investigate the use of carbon nanotube-based field effect transistors for the design of content addressable memory (CAM). An alternate design of a ternary content addressable memory (3CAM) using three-valued circuit structures is presented and it has been shown that the new design can lead to a 25% savings in area with no loss in search speed.
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