期刊
MICRO & NANO LETTERS
卷 6, 期 6, 页码 381-385出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/mnl.2011.0168
关键词
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In this Letter, the authors investigate the use of carbon nanotube-based field effect transistors (CNTFET) for the design of a ternary static random access memory (SRAM). The authors consider two designs - one using 8 transistors and the other using 14 transistors. Using circuit simulation models for CNTFETs, the authors show that both designs produce a functional ternary SRAM cell. The authors also measure the delay and power of the read-and-write operation of the ternary SRAM created using both models and show that the delays are comparable.
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