期刊
MICRO & NANO LETTERS
卷 6, 期 6, 页码 459-462出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/mnl.2011.0219
关键词
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资金
- Nation High Technology Research and Development Program of China [2007AA03Z301]
- Natural Science Foundation of China [20771032, 61076040]
- Anhui Province [070414200]
- Henan Province Scientific and Technological Department Key Programs for Science and Technology Development [092102210198]
- National Basic Research Program of China [2007CB936001]
The atmosphere compensating technique with an individual selenium source is, first, used in the growth of phosphorus-doped p-type ZnSe nanowires. The morphology and structure characterisations reveal that the as-synthesised ZnSe nanowires have a wurtzite structure with a diameter of about 160 nm, a growth direction of [001]. The electrical properties' characterisations demonstrate that the selenium atmosphere compensation technique assisted with phosphorus-doping leads to a substantial action in p-type conductivity of ZnSe nanowires with a high mobility of 1.25 cm(2) V-1 S-1 and carrier concentration of 1.47 x 10(18) cm(-3). The photoluminescence measurements show a dominant emission and two donor-acceptor pair emission.
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