期刊
MATHEMATICS AND COMPUTERS IN SIMULATION
卷 79, 期 4, 页码 1051-1059出版社
ELSEVIER
DOI: 10.1016/j.matcom.2007.09.004
关键词
Nanotube transistors; Electron-phonon interaction; Quantum transport
A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green's function (NEGF) formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed. (C) 2007 IMACS. Published by Elsevier B.V. All rights reserved.
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