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Invited Review Article: Error and uncertainty in Raman thermal conductivity measurements

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REVIEW OF SCIENTIFIC INSTRUMENTS
卷 86, 期 4, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4918623

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  1. LDRD program at Sandia National Laboratories (SNL)
  2. US DOE National Nuclear Security Administration [DE-AC04-94AL85000]

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Error and uncertainty in Raman thermal conductivity measurements are investigated via finite element based numerical simulation of two geometries often employed-Joule-heating of a wire and laser-heating of a suspended wafer. Using this methodology, the accuracy and precision of the Raman-derived thermal conductivity are shown to depend on (1) assumptions within the analytical model used in the deduction of thermal conductivity, (2) uncertainty in the quantification of heat flux and temperature, and (3) the evolution of thermomechanical stress during testing. Apart from the influence of stress, errors of 5% coupled with uncertainties of +/- 15% are achievable for most materials under conditions typical of Raman thermometry experiments. Error can increase to >20%, however, for materials having highly temperature dependent thermal conductivities or, in some materials, when thermomechanical stress develops concurrent with the heating. A dimensionless parameter-termed the Raman stress factor-is derived to identify when stress effects will induce large levels of error. Taken together, the results compare the utility of Raman based conductivity measurements relative to more established techniques while at the same time identifying situations where its use is most efficacious. (C) 2015 AIP Publishing LLC.

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