4.3 Article

Effect of CH/C-2 species density on surface morphology of diamond film grown by microwave plasma jet chemical vapor deposition

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MATERIALS TRANSACTIONS
卷 49, 期 6, 页码 1380-1384

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JAPAN INST METALS
DOI: 10.2320/matertrans.MRA2007324

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diamond; nanocrystalline diamond; mechanism; optical emission spectroscopy (OES); Raman spectrum

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The present research employs in-situ plasma Optical Emission Spectroscopy (OES) to explore the effect of microwave plasma jet chemical vapor deposition (MPJCVD) on activating CH4 + H-2 plasma environment and synthesizing diamond film. Surface morphology and main orientation of lattice plane of the diamond synthesized under different processing parameters are also examined. Since species such as CH, H-2, hydrogen Balmer alpha (H-alpha), carbon dimer (C-2) and hydrogen Balmer beta H in the plasma radical are easily influenced by gas concentration, substrate temperature and processing parameters, in-situ OES is employed to diagnose in-situ OES diagnosing is employed to composition of plasma species in the synthesis of diamond film. Our findings reveal that species such as CH, C-2. and Hp in microwave plasma jet have significant influence on grain size, surface morphology and H/C carbon concentration. The Raman spectrum measurement can prove the relationship between CH/C-2 species density and diamond surface morphology.

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