期刊
MATERIALS TODAY
卷 17, 期 5, 页码 236-246出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mattod.2014.04.026
关键词
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资金
- U.S. Department of Energy, Office of Science, Basic Energy Sciences [DE-SC0004782]
- J. Hewes Crispin and Marjorie Holmes Crispin Stanford Graduate Fellowship
- Marcus and Amalia Wallenberg Foundation under the Stig Hagstom Stipend
Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional conformality on high-aspect ratio structures, thickness control at the Angstrom level, and tunable film composition. With these advantages, ALD has emerged as a powerful tool for many industrial and research applications. In this review, we provide a brief introduction to ALD and highlight select applications, including Cu(In,Ga)Se-2 solar cell devices, high-k transistors, and solid oxide fuel cells. These examples are chosen to illustrate the variety of technologies that are impacted by ALD, the range of materials that ALD can deposit - from metal oxides such as Zn1-xSnxOy, ZrO2, Y2O3, to noble metals such as Pt - and the way in which the unique features of ALD can enable new levels of performance and deeper fundamental understanding to be achieved.
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