期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 24, 期 -, 页码 104-109出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2014.03.028
关键词
Semiconductors; alpha-Fe2O3; Photocatalytic performance; Ga; Doping
类别
资金
- Program of Science and Technology Department of Sichuan Province [2013JY0080]
- Program of Education Department of Sichuan province [11ZA27]
- Research Fund Projects of Sichuan University of Science and Engineering [2012PY05, Y201216, 2012RC18]
- Project of Zigong city [2012 x 07]
- Construct Program of the Discipline in Sichuan University of Science and Engineering
- Opening Project of Key Laboratory of Green Catalysis of Sichuan Institutes of High Education [LZJ1202]
Gallium (Ga)-doped hematite (alpha-Fe2O3) with different molar ratios of Ga/Fe (1%, 2%, 3% and 4%) was prepared by a facile parallel flow co-precipitation method. The photocatalysts prepared were characterized by the Brunauer-Emmett-Teller method, X-ray diffraction, UV/vis diffuse reflectance spectroscopy, and scanning electron microscope. The photogenerated charges separation efficiency of different photocatalysts was investigated using benzoquinone as scavenger. The formation rate of (OH)-O-center dot radicals produced during the photocatalytic reaction process was studied by a terephthalic acid photoluminescence probing technique. Doping Ga3+ into alpha-Fe2O3 increases the specific surface area and the separation efficiency of photo-induced charges. The catalytic activity of the photocatalysts for decolorization of methyl orange aqueous solution was investigated. The results show that alpha-Fe2O3 doped with 3% Ga possesses the best photocatalytic activity. The underlying mechanism is suggested. (C) 2014 Elsevier Ltd. All rights reserved.
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