Effect of radio frequency power on the properties of p-type SnO deposited via sputtering

P-type SnO thin films were fabricated via radio frequency (rf) reactive magnetron sputtering on borosilicate substrates, with an Sn target and Ar/O-2 gas mixture. As the rf power increased, the structural defects were formed in SnO thin films lowering the optical absorption edge. It was found that the SnO thin films showed a short-range ordered crystalline structure and the crystallinity was slightly improved as the rf power increased. The electrical conductivity of SnO thin films was increased as the rf power increased and at 300 W, the conductivity was 0.048 (Omega cm)(-1), but it exhibited the very poor mobility of 0.02 cm(2)/Vs. (C) 2013 Elsevier Ltd. All rights reserved.