4.6 Article

An evaluation of the deposition parameters for indium sulfide (In2S3) thin films using the grey-based Taguchi method

期刊

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 16, 期 6, 页码 1879-1887

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2013.06.012

关键词

In2S3; Buffer layer; Optical properties; Magnetron sputtering

资金

  1. HOPE Vacuum Technology Corp., Ltd.
  2. Ministry of Education [100G-88-001]

向作者/读者索取更多资源

This paper presents an optimal deposition-parameter design for Indium sulfide (In2S3) thin films, using radio frequency (RF) magnetron sputtering for soda-lime glass substrates. The grey relational analysis (GRA), using the Taguchi method with an L-9 (34) orthogonal array, a signal-to-noise (SIN) ratio and an analysis of variance (ANOVA) are used to optimize the multiple performance characteristics (deposition rate and optical transmittance). The effect of the optimization of the In2S3 films' deposition parameters (RF power, sputtering pressure, substrates temperature and deposition time) on the structure, morphology and optical transmittance are studied. The results of the confirmation experiments demonstrate that the deposition rate and optical transmittance of In2S3 films is improved by using a deposition process that is optimized using the grey-based Taguchi method. (C) 2013 Elsevier Ltd. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据