期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 15, 期 4, 页码 412-420出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2012.02.008
关键词
Silicon thin films; Crystallization; PECVD; Substrates
类别
资金
- Science and Technology Commission of Shanghai Municipality [10160503300]
- Leading Academic Discipline Project [DZL804]
- Program for Innovative Research Team [DXL902]
- R&D Project for Industrial Applications of Shanghai Normal University [DCL201104]
- Innovation Program of Shanghai Municipal Education Commission [09YZ151]
Microcrystalline silicon (mu c-Si) thin films are widely used for silicon thin film solar cells, especially in the high performance tandem solar cells which comprise an amorphous silicon junction at the top and a mu c-Si junction at the bottom. One of the major factors affecting the photovoltaic properties of mu c-Si thin film solar cells of thin films is the quality of the mu c-Si thin films. In this work, we investigated the effect of substrates on the crystallization characteristics and growth behaviors of mu c-Si thin films grown by the plasma enhanced chemical vapor deposition method (PECVD), and found that substrates have a strong effect on the crystallization characteristics of mu c-Si thin films. In addition, the growth rate of mu c-Si thin films was also highly influenced by the substrates. Three types of substrates, quartz glass, single crystalline silicon and thermally oxidized single crystalline silicon, were used for growing mu c-Si thin films from SiH4/H-2 with a flow rate ratio 2:98 at different temperatures. Crystallization characteristics of these mu c-Si thin films were studied by Raman scattering and X-ray diffraction techniques. (C) 2012 Elsevier Ltd. All rights reserved.
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