期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 13, 期 3, 页码 137-140出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2010.05.005
关键词
ZnO; Sol-gel spin coating; Nanostructure; Photodiode
类别
资金
- Anadolu University [061039]
- National Boron Research Institute (BOREN) [BOREN-2006-26-C25-19]
The electrical and photovoltaic properties of the nanostructure ZnO/p-Si diode have been investigated. The nanostructure ZnO/p-Si diode was fabricated using sot-gel spin coating method. The ideality factor and barrier height of the diode were found to be 3.18 and 0.78 eV, respectively. The obtained n ideality factor is higher than 2, indicating that the diode exhibits a non-ideal behavior due to the oxide layer and the presence of surface states. The nanostructure of the ZnO improves the quality of ZnO/p-Si interface. The diode shows a photovoltaic behavior with a maximum open circuit voltage V(oc) of 0.26 V and short-circuits current I(sc) of 1.87 x 10(-8) A under 100 mW/cm(2). It is evaluated that the nanostructure ZnO/p-Si diode is a photodiode with the obtained electronic parameters. (C) 2010 Elsevier Ltd. All rights reserved.
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