期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 13, 期 4, 页码 245-251出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2010.08.002
关键词
Tantalum oxide; Sputtering; Metal-insulator-semiconductor structure; Electrical properties
类别
资金
- University Grants Commission, New Delhi, India [F.30-4/(2004)SR]
- MKE (Next-Generation Substrate Technology for High Performance Semiconductor Devices), Republic of Korea [KI002083]
The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta2O5) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic beta-phase Ta2O5. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta2O5/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was < 20 nA cm(-2) at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was Poole-Frenkel. (C) 2010 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据