期刊
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
卷 177, 期 2, 页码 233-238出版社
ELSEVIER
DOI: 10.1016/j.mseb.2011.10.001
关键词
Graphene; h-BN; CVD; Polycrystalline Ni substrates
Boron and nitrogen-incorporated graphene thin films were grown on polycrystalline Ni substrates by thermal chemical vapor deposition using separate boron- and nitrogen-containing feedstocks. Boron and nitrogen atoms were incorporated in the film in almost equal amounts and the total content reached similar to 28%. The film predominantly consisted of separate graphene and boron nitride domains. Carrier concentration in the graphene domains was estimated to be about 1 x 10(-3) e/atom (3.8 x 10(12) cm(-2)) from G band shift in Raman spectra. (C) 2011 Elsevier B.V. All rights reserved.
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