期刊
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
卷 176, 期 7, 页码 548-551出版社
ELSEVIER
DOI: 10.1016/j.mseb.2010.12.018
关键词
ZnO, p-type, p-ZnO:Li/n-Si heterojunctions
资金
- National Basic Research Program of China [2007CB936201]
- National High Technology Research and Development Program of China [2006AA03Z351]
- Major Project of International Cooperation and Exchanges [2006DFB51000]
Li-doped p-type ZnO thin films were grown by using radio frequency magnetron sputtering. In our experiment, ZnO targets were fabricated by using the Li-doped ZnO powders that had been synthesized by glycine (urea)-nitrate combustion process. The structural characteristics of ZnO thin films were examined by XRD and SEM. The results showed that ZnO films possess a good crystalline with c-axis orientation, uniform thickness and dense surface. Current-voltage properties of p-ZnO:Li/n-Si structure had been examined in an effort to delineate the carrier type behavior in ZnO semiconductor. p-ZnO:Li/n-Si heterojunctions displayed rectifying behavior. As a result I-V measurements exhibited a polarity consistent with the Li-doped ZnO being p-type. (c) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据