期刊
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
卷 166, 期 3, 页码 230-234出版社
ELSEVIER
DOI: 10.1016/j.mseb.2009.11.024
关键词
Light extraction; LED; Wet etching; Spin coating; Zinc oxide
资金
- MKE/KEIT [2008-S-001-01]
We propose a simple technique to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs) by using nanoscale ITO/ZnO layer-texturing. The Surface texturing of the ITO and ZnO layers was performed using a wet chemical etching and a spin-coating process, respectively. It has been found that the light extraction efficiency of the ITO-/ZnO-textured LED was 34.5% greater than that of a conventional LED with a planar ITO, at 20 mA of current injection. A high level of multiple light scattering at the textured surface promoted a high-efficiency in the InGaN/GaN LEDs. In addition, the individual performance of the ITO and ZnO texturing on the LED Surface was also investigated. The lowered forward voltage of the ITO/ZnO layer-textured LED indicated this could be a damage-free approach for device fabrication. (C) 2009 Elsevier B.V. All rights reserved.
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