期刊
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
卷 163, 期 3, 页码 170-173出版社
ELSEVIER
DOI: 10.1016/j.mseb.2009.05.018
关键词
Moth-eye structure; GaN; Photon extraction efficiency; Green LED; Photoluminescence; Nanoimprint lithography
资金
- Ministry of Knowledge and Economy (MKE)
- Seoul RBD Program [NT080570M0211611]
- Korea Institute of Industrial Technology(KITECH) [2008-E-AP-HM-P-09-0000] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2007-2000493] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure. (C) 2009 Elsevier B.V. All rights reserved.
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