期刊
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
卷 154, 期 -, 页码 260-263出版社
ELSEVIER
DOI: 10.1016/j.mseb.2008.09.036
关键词
Anisotropy; Defect diffusion; Extended defects; Strain; Stress; {311}-Defects
In this paper, the influence of biaxial strain-induced diffusion anisotropy on the evolution of extended defects in silicon has been analyzed. Point-defect diffusion anisotropy has been modeled and implemented within an atomistic kinetic Monte Carlo framework. The anneal of {3 1 1}-defects has been simulated for self-interstitial diffusion anisotropies varying within the plausible ranges. From these simulations, it is observed that diffusion anisotropy has a significant effect on the competition between defect ripening and dissolution. in particular, it is shown that the plot of {3 1 1} density versus {3 1 1} mean size could be used to check for the existence of self-interstitial diffusion anisotropy. (C) 2008 Elsevier B.V. All rights reserved.
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