4.7 Article

Characterization of the microstructure in random and textured polycrystals and single crystals by diffraction line profile analysis

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.msea.2010.08.059

关键词

Dislocation structure; Planar defects; Texture; Strain anisotropy; X-ray line broadening

资金

  1. Hungarian National Science Foundation, OTKA [T-71594, T-80772, T-67692]
  2. Magyary Zoltan Fund
  3. EEA
  4. Norway Grants

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X-ray or neutron diffraction patterns are simulated by convoluting defect specific profile functions based on continuum theory of elasticity. The defect related profile functions are controlled by the physically mandatory minimum number of parameters: the dislocation density, rho the dislocation arrangement parameter, M, one or more parameters describing strain anisotropy where their number depends on the crystal symmetry, the median, m and the logarithmic variance, sigma of the log-normal size distribution function, and finally the density of stacking faults, alpha or the frequency of twin boundaries, beta. These parameters are, at the same time, among the most relevant physical parameters describing the microstructure of crystalline materials. The theoretical diffraction patterns are produced by the convolution of the defect related, physically based profile functions in the extended Convolutional Multiple Whole Profile (eCMWP) software package. The usage of the software package is demonstrated by the microstructure determination in randomly-textured and textured polycrystalline and single crystals specimens of different materials. (C) 2010 Elsevier B.V. All rights reserved.

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