期刊
MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS
卷 15, 期 6, 页码 833-836出版社
UNIV FED SAO CARLOS, DEPT ENGENHARIA MATERIALS
DOI: 10.1590/S1516-14392012005000108
关键词
Raman scattering; 6H-SiC; impurity
资金
- Xi'an Applied Materials Innovation Fund [XA-AM-201013]
Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.
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