期刊
MATERIALS RESEARCH BULLETIN
卷 55, 期 -, 页码 176-181出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2014.03.039
关键词
Chalcogenides; Nanostructures; Optical materials; Chemical synthesis; Electrical properties
资金
- Florida Cluster for Advanced Smart Sensor Technologies (FCASST)
- United States Army [W81XWH1020101/3349]
- U.S. Department of Defense (DOD) [W81XWH1020101] Funding Source: U.S. Department of Defense (DOD)
In2S3 nanosheets were synthesized using a low temperature tetraethyleneglycol (TEG) mediated polyol route and polyvinylpyrrolidone (PVP) as the capping agent. Thin In2S3 nanosheet of thickness of 8-10 am was obtained under optimized PVP concentration of 0.5 g. The thin nanosheets were formed of 10 nm sized crystalline tetragonal-shaped In2S3 nanocrystals assemblying into the nanosheet structures. The dimensions and the crystallinity of the nanosheets were dependent on the concentration of the PVP in the reaction medium. The nanosheets were cold-pressed into dense nanostructured pellets to measure their room temperature on-the-surface photoresponse characteristics. The nanostructured devices showed enhancement in conductivity under light as compared to that in the dark and demonstrated photoswitching behavior. Superior electrical conductivity (144% higher) and higher life time of free carriers (20.9 +/- 2.5 s) observed from the optimized sample suggested its application as a low-cost photodetector. (C) 2014 Elsevier Ltd. All rights reserved.
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