期刊
MATERIALS RESEARCH BULLETIN
卷 60, 期 -, 页码 719-729出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2014.09.054
关键词
Thin films; Microstructure; Optical properties; Electrical properties; Impedance spectroscopy
Tungsten oxide (WOx) thin film have been deposited onto glass substrates using the thermal vacuum evaporation technique, monitored by an annealing process in a variable oxygen atmosphere. Analysis by X-ray diffraction and Raman spectroscopy showed the structural changes from orthorhombic to monoclinic which depend on the annealing temperature and the oxygen content. AFM study shows that the increase of oxygen content leads to a decrease of the root-mean-square from 94.64 nm to 2 nm. Ellipsometric measurements have been used to evaluate the optical constants. Further, it is found that when the oxygen content increases, the band gap of the annealed layer varies from 3.01 eV to 3.52 eV by against, the Urbach energy decreases. The AC conductivity plot showed a universal power law according to the Jonscher model. Moreover, at high frequency semiconductor-to-metallic behavior has been observed. Finally, the effect of annealing in oxygen atmosphere on their structural modifications, morphological, optical properties and electrical conductivity are reported. (C) 2014 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据