期刊
MATERIALS RESEARCH BULLETIN
卷 47, 期 2, 页码 302-307出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2011.11.020
关键词
SILAR; Thin film; Cu2ZnSnS4; Photoelectrochemical cell
资金
- University Grants Commission (UGC), New Delhi [36-207/2008]
- Department of Science and Technology, New Delhi [INT/ROK/PROJ/34/2008]
Cu2ZnSnS4 (CZTS) thin films have been prepared by a novel chemical successive ionic layer adsorption and reaction (SILAR) method. These films were annealed in vacuum at 673 K and further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-vis spectroscopy, electrical, and wettability studies. The X-ray diffraction studies showed the formation of kesterite structure of CZTS films. Scanning electron micrograph revealed the formation of densely packed, compact and large grained CZTS films. The CZTS films showed high optical absorption (10(4) cm(-1)) exhibiting band gap energy 01 1.55 eV. Wettability test revealed the hydrophilic nature of CZTS films. The CZTS thin films showed semiconducting behavior with p-type electrical conductivity. Further photovoltaic activity of these films was studied by forming the photoelectrochemical cell. (C) 2011 Elsevier Ltd. All rights reserved.
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