4.6 Article

Correlation of photoluminescence quenching with Charge Transport in group III (Al, Ga & In) elements doped CdS/PVA NCs: Experimental and First Principles Studies

期刊

MATERIALS LETTERS
卷 132, 期 -, 页码 38-40

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2014.06.048

关键词

Nanocomposites; electron-phonon interactions; luminescence; simulation and modeling

资金

  1. DST, India

向作者/读者索取更多资源

Nanocomposites of polyvinyl alcohol (PVA) with group III elements doped CdS have been synthesized via in situ chemical route. The optical properties of doped and pristine products are investigated by Raman spectroscopy, optical transmittance and photoluminescence (PL). Raman spectroscopy has shown peaks at 300 cm(-1), 603 cm(-1) and 900 cm(-1) corresponding to first, second and third order scattering of longitudinal optical (LO) phonon modes respectively. Electron-phonon interactions are estimated from Raman spectra and found to be stronger in doped samples. All the samples show high transmittance in wavelength region above 500 nm. In the present work, PL quenching has been observed in Al, Ga and In doped CdS/PVA. Density functional theory (OFT) has been employed to interpret the relation between reduction in PL intensity and charge on nanoclusters. DFT simulations indicate that decrease of charge on S results in corresponding quenching of PL (C) 2014 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据