期刊
MATERIALS LETTERS
卷 114, 期 -, 页码 26-28出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2013.09.096
关键词
Epitaxial growth; Chemical vapor deposition; Semiconductors; Raman; AlN template
资金
- National Key Basic Research Program of China [2011CB301901]
- National Natural Science Foundation of China [61322406, 61274038, 61204070, 51072195, 51072196]
- National High-Tech RD Program (863) [2011AA03A111]
We studied the influence of the growth temperature of AlN nucleation layer (T-NL) on the AlN template grown by high-temperature metal-organic chemical vapor deposition (HT-MOCVD). The AlN templates were characterized by high-resolution X-ray diffractometer, atomic force microscopy and room-temperature Raman scattering spectrometer. The results revealed that the T-NL had a direct influence on the quality of the AlN template. By optimizing the T-NL at 950 degrees C, we obtained a high-quality AlN template with the full width at half maxima for the (0002) and (10-12) planes of 90 '' and 612 '', respectively. The AlN template also presented atomic level step with a root mean square (RMS) roughness of 0.133 nm. In addition, it performed excellent single crystallographic orientation along the c-axis. The growth evolution of AlN nucleation layer at different T-NL was also explained in detail. (C) 2013 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据