期刊
MATERIALS LETTERS
卷 105, 期 -, 页码 72-75出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2013.03.100
关键词
ZrON/Si structure; SEM; AFM; Spectroscopic ellipsometry
资金
- Ministry of Higher Education, Malaysia [UM.C/625/1/HIR/MOHE/ENG/27]
- Academy of Sciences for the Developing World (TWAS) through TWAS-COMSTECH Research Grant
ZrON/Si(100) layer structure formation has been produced by oxidation/nitridation of sputtered Zr metal in N2O/Ar ambient at 500-900 degrees C. Micromorphology and structural properties of the films have been evaluated by scanning electron microscopy, atomic force microscopy, and reflection high-energy electron diffraction. Dispersive optical properties of the ZrON/Si reflection system have been studied with spectroscopic ellipsometry. A drastic increase of SiO2-based interface layer thickness has been found at 700-900 degrees C. (C) 2013 Elsevier B.V. All rights reserved.
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