Growth and characterization of Mg-doped GaN nanowire synthesized by the thermal evaporation method

The Mg-doped GaN nanowires with very high aspect ratio grew by the Vapor-Liquid-Solid method onto Si substrates using Ni as catalyst and Mg3N2 powder as Mg source. Structural and optical characterizations of un-doped and Mg-doped GaN nanowires were investigated. The XRD shows that the relative intensities of other peaks [in comparison to (100)] increases with the incorporation of Mg. It indicates that Mg changes the preferential growth direction of nanowires. PL studies revealed that without doped samples a few donor levels rose due to structural defects. The incorporation of Mg produces a few additional donor levels (arising due to structural defects) as well as acceptor levels (arising due to Mg doping). These Mg-doped nanowires may be used as p-type nanowire. (C) 2013 Elsevier B.V. All rights reserved.