期刊
MATERIALS LETTERS
卷 107, 期 -, 页码 255-258出版社
ELSEVIER
DOI: 10.1016/j.matlet.2013.06.010
关键词
Nano-needle; Semiconductors; Chemical vapor deposition; Defects; Field emission properties
High density aluminum nitride nano-needles with sharp tips have been synthesized on Si substrate by pre-treating the precursors with aqueous NH3 via facile chemical vapor deposition method without any catalyst. The as synthesized nano-needles have been characterized by XRD, FESEM, EDX, HRTEM and SAED. The observed diameter of the nano-needles is 40-100 nm having sharp tips. The AlN-nano-needles exhibited amazing turn-on field of 5.65 V mu m(-1) (0.01 mA cm(-2)) at room temperature which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The room-temperature PL emission peak at 486 nm (2.55 eV) indicates that AlN nano-needles also have potential application in light-emitting nano-device. (C) 2013 Elsevier B.V. All rights reserved.
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