期刊
MATERIALS LETTERS
卷 93, 期 -, 页码 121-124出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2012.11.058
关键词
Thermoelectric; Structure fluctuation; Phase transition; Semiconductor
资金
- National Basic Research Program of China (973-program) [2013CB632501]
- NSFC [51121064, 11234012, 51222209, 50825205]
- CAS/SAFEA
- IEA under the Implementing Agreement of AMT via DOE Office EERE Vehicle Technology Program
- DOE [DE-AC05-00OR22725]
- US DOE [DEAC0298CH10886, DE-SC00000957]
- Center for Solar and Thermal Energy Conversion Research Center
Thermoelectric effects and related technologies have attracted a great interest due to world-wide energy harvesting. Thermoelectricity has usually been considered in the context of stable material phases. Here we report that the fluctuation of structures during the second-order phase transition in Cu2Se semiconductor breaks the conventional trends of thermoelectric transports in normal phases, leading to a critically phase-transition-enhanced thermoelectric figure of merit zT above unity at 400 K, a three times larger value than for the normal phases. Dynamic structural transformations introduce intensive fluctuations and extreme complexity, which enhance carrier entropy and thus the thermopower, and strongly scatter carriers and phonons as well to make their transports behave critically. (C) 2012 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据