Few-atomic-layer boron nitride sheets syntheses and applications for semiconductor diodes

We report the results on the direct synthesis of crystalline boron nitride nanosheets (BNNS) and its application for metal/doped BNNS semiconductor-based Schottky type diode devices. Scanning transmission electron microscopy images reveal that we have obtained few-atomic-layer hexagonal boron nitride sheets with well-shaped edge. The crystallographic structure, chemical composition, and bond structure of the few-atomic-layer BNNS were investigated using electron microscopy and Raman scattering spectroscopy. Typical non-linear current-voltage properties of BNNS semiconductor based diode are characterized. (C) 2012 Elsevier B.V. All rights reserved.