Preparing graphene with notched edges and nanopore defects by γ-ray etching of graphite oxide

Graphene nanostructures with notched edges and nanopore defects were produced by the gamma-ray irradiation of the graphite oxide in polar solvents. Because of the grafting of the long polymer chains, the thickness of the graphene monolayers is shown to be significantly increased. In addition, the graphitization degree got increased in unetched regions of the irradiated graphene due to the annealing effect induced by irradiation from the Raman investigation. Spontaneously interlocking between the etching graphene and polymer matrix will be arisen with the formation of these nanostructures. The development of graphene with large contact area and nanopore volume may be of use in composites and sensors. (C) 2012 Elsevier B.V. All rights reserved.