Realization of 479 nm (2.59 eV) emission CdZnO nanorods and the application on solar cells

CdZnO nanorods were grown by chemical vapor deposition. The structural and compositional properties of CdZnO nanorods were characterized. Photoluminescence studies show that CdZnO nanorods with emissions from 2.98 eV (415 nm) to 2.59 eV (479 nm) were realized. Temperature dependent photoluminescence confirmed that the origin of CdZnO's near band edge emissions. The n-CdZnO/p-GaN heterojunction diode functions as a solar cell and achieved a prominent open circuit voltage of 1.32 V at 100 mW/cm(2), indicating that CdZnO nanomaterials are promising in visible wavelength optoclectronics application. Published by Elsevier B.V.