Preparation and properties of antiperovskite Mn3NiN thin film

The magnetic and electronic transport properties of the antiperovskite Mn3NiN thin film deposited on quartz substrate using magnetron sputtering were investigated. The film shows a (100) preferred orientation. It is worthwhile noting that a positive magnetoresistance (MR) effect was found in the whole measured temperature region and the maximum MR value by 31% was obtained at about 300 K under 2 T. On the other hand, when cooling from room temperature, a spin-glass behavior was also observed in the Mn3NiN film and the Tb shifted to lower temperature with increasing external magnetic field. In contrast to the bulk counterpart, the temperature dependent resistivity of the film shows a semiconductor-like behavior. (C) 2011 Elsevier B.V. All rights reserved.