期刊
MATERIALS LETTERS
卷 65, 期 19-20, 页码 3102-3104出版社
ELSEVIER
DOI: 10.1016/j.matlet.2011.06.095
关键词
Lead-free ferroelectric; Oxynitride; Sputtering; Thin films; Dielectric properties; Tunability; Conductivity
Oxynitride LaTiO2N thin films were deposited on Pt/Ti/SiO2/Si substrates by RF reactive sputtering. X-ray diffraction analysis highlighted the polycrystalline structure of the films, while SEM showed regular, ordered grains with smooth surface. Our films gave interesting values of electric tunability compared to oxide films, especially the thinner one with an exceptional value of 72% obtained under a low voltage of only 3.3 V. (C) 2011 Elsevier B.V. All rights reserved.
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