期刊
MATERIALS LETTERS
卷 64, 期 12, 页码 1350-1353出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2010.03.058
关键词
Thin films; Epitaxial growth; Deposition; MOCVD
资金
- National Natural Science Foundation of China [50872073]
Tin oxide (SnO2) epitaxial film has been deposited on Y-stabilized ZrO2 (YSZ) (100) substrate by metalorganic chemical vapor deposition (MOCVD). Structural and optical properties of the film as well as the epitaxial mechanism have been investigated in detail. The results of structure analyses show that the obtained film is epitaxial SnO2 with orthorhombic columbite structure. A novel epitaxial relationship of orthorhombic SnO2(100)parallel to YSZ(100) with SnO2[001]parallel to YSZ < 001 > was clearly observed from the interface area between the film and the substrate. The absolute average transmittance of the orthorhombic SnO2 film in the visible range exceeds 90%, and the optical band gap of the film is about 3.79 eV. (C) 2010 Elsevier B.V. All rights reserved.
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