期刊
MATERIALS LETTERS
卷 64, 期 10, 页码 1137-1139出版社
ELSEVIER
DOI: 10.1016/j.matlet.2010.02.027
关键词
Chemical vapour deposition; Epitaxial growth; GaN; GaN on Si; SiC buffer; Residual stress
资金
- Korean Ministry of Education, Science and Technology, through the Korean Science and Engineering Foundation (KOSEF) [R01-2007-000-11818-0]
- National Research Foundation of Korea [R01-2007-000-11818-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Effects of SiC buffer layers were studied on the residual strain of GaN films grown on 3C-SiC/Si (111) substrates. It was clearly observed by Raman scattering measurement that the residual strain of the GaN/Si is reduced by inserting the SiC intermediate layer. Furthermore, residual strain within the GaN/SiC/Si films decreased when the growth temperature of the SiC buffer layer decreased. It was proposed that the irreversible creep phenomenon occurs during the high temperature growth of SiC, affecting nature of the residual strain within the SIC and the GaN layers. (C) 2010 Elsevier B.V. All rights reserved.
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