期刊
MATERIALS LETTERS
卷 63, 期 12, 页码 972-974出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2009.01.047
关键词
Semiconductors; Chemical vapor deposition; Microstructure; Nanomaterials
资金
- NRF (Singapore)
- ARC
- CSIRO (Australia)
A custom-designed inductively coupled plasma assisted radio-frequency magnetron sputtering deposition system has been used to fabricate N-doped p-type ZnO (ZnO:N) thin films on glass substrates from a sintered ZnO target in a reactive At + N-2 gas mixture. X-ray diffraction and scanning electron microscopy analyses show that the ZnO:N films feature a hexagonal crystal structure with a preferential (002) crystallographic orientation and grow as vertical columnar structures. Hall effect and X-ray photoelectron spectroscopy analyses show that N-doped ZnO thin films are p-type with a hole concentration of 3.32 x 10(18) cm(-3) and mobility of 1.31 cm(2) V-1 s(-1). The current-voltage measurement of the two-layer structured ZnO p-n homojunction clearly reveals the rectifying ability of the p-n junction. The achievement of p-type ZnO:N thin films is attributed to the high dissociation ability of the high-density inductively coupled plasma source and effective plasma-surface interactions during the growth process. (C) 2009 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据