期刊
MATERIALS LETTERS
卷 62, 期 4-5, 页码 633-636出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2007.06.042
关键词
ceramics; dielectric properties; doping
The substitution of the aliovalent dopant Cr2O3 on the Ti site was investigated in terms of the effects on the dielectric properties at doping levels ranging front 0.1 to 1.0%. No evidence of secondary phases was observed from XRD analysis, but both the permittivity and dielectric loss of 1% Cr2O3 doped CaCu3Ti4O12 were improved with K approximate to 19,000 and tan delta approximate to 0.049 at 1 kHz. Also, 1 % Cr2O3 doping was effective at maintaining the high K up to 150 V. From these results, it can be incurred that Cr2O3 doping is an efficient method to achieve a high-K and low loss. (c) 2007 Elsevier B.V. All rights reserved.
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