期刊
MATERIALS CHEMISTRY AND PHYSICS
卷 126, 期 3, 页码 655-659出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2010.12.066
关键词
Semiconductors; Crystal growth; Electron microscopy; Field emission
资金
- National Nature Science Foundation of the People's Republic of China [50902124]
- Zhejiang Provincial Natural Science Foundation [Y4090468]
- National Basic Research Program of China (973 Program) [2010CB933501]
- Innovative Youth Team of Natural Science Foundation of Zhejiang Province [R4090058]
Lawn-like SiC nanowire arrays were successfully synthesized on graphite substrates by thermal evaporation of silicon powders at high temperature. The morphology, microstructure and composition of the nanowires were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The product grown on graphite substrates was hexagonal prism-shaped single-crystal 3C-SiC nanowires with high aspect ratio. Planar defects, such as microtwins and stacking faults were observed in SiC nanowires. Field emission measurements of the SiC nanowires grown on graphite substrate showed a very low threshold field of 2.1 V mu m(-1), high brightness and stable field emission performance. (C) 2011 Elsevier B.V. All rights reserved.
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