期刊
MATERIALS CHEMISTRY AND PHYSICS
卷 108, 期 1, 页码 16-23出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2007.08.035
关键词
semiconductors; chemical synthesis; electronic characterization; electrical properties
Polycrystalline ternary AgIn5S8 films were deposited on indium-tin-oxide coated glass substrates by using chemical bath deposition. New procedures for the growth of films are presented. The solutions containing silver nitrate, indium nitrate, triethanolamine, ammonium nitrate, and thioacetamide under acidic conditions were used for the deposition of AgIn5S8 polycrystalline films. The influences of various deposition parameters on structural, optical, and electrical properties of films have been investigated. The X-ray diffraction patterns show cubic AgIn5S8 is the major crystalline phase. With different substrates, the different crystalline phases were observed. The band gaps and carrier densities of these samples determined from transmittance spectra, electrochemical and Hall measurements are in the range of 1.73-1.85 eV and 4.35 x 10(14) to 6.53 x 10(14) cm(-3), respectively. The flat band potentials of these samples are located between -0.31 and -0.41 V versus normal hydrogen electrode by using the Mott-Schottky measurements. All samples indicated n-type conductivities by electrochemical and Hall measurements. The maximum photocurrent density of samples prepared in this study was found to be 4.5 mA cm(-2) under the illumination using a 300 Xe lamp system with the light intensity kept at 100 mW cm(-2). (C) 2007 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据