期刊
MATERIALS CHARACTERIZATION
卷 97, 期 -, 页码 57-68出版社
ELSEVIER SCIENCE INC
DOI: 10.1016/j.matchar.2014.08.020
关键词
Laser shock peening; Aluminium alloy; Residual stress; Characterization; Grain refinement; Dislocations
This paper systematically investigates the effect of laser shock peening without coating parameters on the microstructural evolution, and dislocation configurations induced by ultra-high plastic strains and strain rates. Based on an analysis of optical microscopy, polarized light microscopy, transmission electron microscopy observations and residual stress analysis, the significant influence of laser shock peening parameters due to the effect of plasma generation and shock wave propagation has been confirmed. Although the optical microscopy results revealed no significant microstructural changes after laser shock peening, i.e. no heat effect zone and differences in the distribution of second-phase particles, expressive influence of laser treatment parameters on the laser shock induced craters was confirmed. Moreover, polarized light microscopy results have confirmed the existence of well-defined longish grains up to 455 mu m in length in the centre of the plate due to the rolling effect, and randomly oriented smaller grains (20 mu m x 50 mu m) in the surface due to the static recrystallization effect. Laser shock peening is reflected in an exceptional increase in dislocation density with various configurations, i.e. dislocation lines, dislocation cells, dislocation tangles, and the formation of dense dislocation walls. More importantly, the microstructure is considerably refined due to the effect of strain deformations induced by laser shock peening process. The results have confirmed that dense dislocation structures during ultra-high plastic deformation with the addition of shear bands producing ultra-fine (60-200 nm) and nano-grains (20-50 nm). Furthermore, dislocation density was increased by a factor of 2.5 compared to the untreated material (29 x 10(13) m(-2) vs. 12 x 10(13) m(-2)). (C) 2014 Elsevier Inc. All rights reserved.
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