4.7 Article

Low Elastic Modulus and High Charge Mobility of Low-Crystallinity Indacenodithiophene-Based Semiconducting Polymers for Potential Applications in Stretchable Electronics

期刊

MACROMOLECULES
卷 51, 期 16, 页码 6352-6358

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.macromol.8b00898

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资金

  1. NSF under CCI Center for Selective C-H Functionalization [CHE-1700982]
  2. State of Washington through the University of Washington Clean Energy Institute
  3. NSF NRT-DESE [1633216]
  4. National Science Foundation [1542101, 1337840, 0335765]
  5. National Institutes of Health
  6. Molecular Engineering & Sciences Institute
  7. Clean Energy Institute
  8. Washington Research Foundation
  9. M. J. Murdock Charitable Trust
  10. Altatech
  11. ClassOne Technology
  12. GCE Market
  13. Google
  14. SPTS
  15. [DMR-1533372]
  16. [DMR-1708317]

向作者/读者索取更多资源

A series of alkyl-substituted indacenodithiophene (alkyl-IDT) semiconducting donor-acceptor polymers were designed by DFT to have varying degrees of backbone planarity and synthesized via direct arylation polymerization (DArP). These polymers exhibit weak intermolecular interactions, a glass transition temperature (T-g) below room temperature, and low degrees of crystallinity from XRD measurements. Despite this, the field-effect mobilities (mu) of these polymers are relatively high (0.06-0.20 cm(2) s(-1)) with mobility increasing with increasing backbone planarity. Because of the weak intermolecular interactions, the polymers exhibit low elastic moduli (E-f) of less than 450 MPa. The polymer with the most twisted backbone exhibits high ductility with a crack-onset strain (CoS) over 100%. These structure-property relationship studies provide useful guidelines for designing semiconducting polymers with high mobility, low stiffness, and high ductility enabling applications in stretchable electronics.

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