4.4 Article

Diode-pumped passively mode-locked Nd:GGG laser at 1331.3 nm

期刊

LASER PHYSICS LETTERS
卷 9, 期 7, 页码 481-484

出版社

IOP PUBLISHING LTD
DOI: 10.7452/lapl.201210022

关键词

Nd:GGG crystal; passive mode-locking; SESAM; diode-pumped

资金

  1. National Natural Science Foundation of China [11074148, 91022003, 51021062]
  2. 863 program of China [2010AA0301587003]
  3. Technology development Program of Shandong Province [2011GGH20210]

向作者/读者索取更多资源

The performance of the passively continuous-wave mode-locked Nd-doped gadolinium gallium garnet (Nd:GGG) laser at 1331.3 nm with a semiconductor saturable absorber mirror (SESAM) was investigated for the first time to our knowledge. At the absorbed pumped power of 5.36 W, an average output power of 467 mW was obtained with a slope efficiency of 10%. The minimum pulse duration was measured to be 5 ps with a repetition rate of 33 MHz. [GRAPHICS] (C) 2012 by Astro, Ltd.

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