期刊
LASER & PHOTONICS REVIEWS
卷 7, 期 1, 页码 114-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/lpor.201200043
关键词
Silicon photonics; optically active defects; nano light sources; photonic crystal cavity; silicon light emis
资金
- Era-NET NanoSci LECSIN
- Italian Ministry of University and Research [RBAP06L4S5]
- UK EPSRC UK Silicon Photonics
- Engineering and Physical Sciences Research Council [EP/J01771X/1, EP/H00680X/1] Funding Source: researchfish
- EPSRC [EP/H00680X/1, EP/J01771X/1] Funding Source: UKRI
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Delta lambda = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm(2) is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据