期刊
LASER & PHOTONICS REVIEWS
卷 4, 期 5, 页码 610-632出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/lpor.200910038
关键词
Silicon; germanium; SiGe; quantum cascade lasers; intersubband; lifetimes
资金
- Engineering and Physical Sciences Research Council [GR/S27535/01] Funding Source: researchfish
A review is presented of work over the last 10 years which has been aimed at trying to produce a Si-based THz quantum cascade laser. Potential THz applications and present THz sources will be briefly discussed before the materials issues with the Si/SiGe system is discussed. Waveguide designs and waveguide losses will be presented. Experimental measurements of the non-radiative lifetimes for intersubband transitions in Si1-xGex quantum wells will be presented along with theory explaining the important scattering mechanisms which determine the lifetimes. Examples of p-type Si/SiGe quantum cascade designs with the experimental electroluminescence will be reviewed and examples of n-type Si-based designs will be presented. In the conclusion designs and structures will be discussed with the greatest potential to achieve an electrically pumped Si-based THz laser.
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