期刊
APPLIED SURFACE SCIENCE
卷 336, 期 -, 页码 138-142出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2014.10.038
关键词
Pulsed laser deposition; Bismuth-antimony telluride; Thermoelectric properties; Thin films
类别
资金
- European Regional Development Fund
- Republic of Cyprus through the Research Promotion Foundation [ANAVATHMISI/0609/06]
We report on the pulsed laser deposition of p-type Bi0.5Sb1.5Te3 thin films onto fused silica substrates by ablation of dense targets of Bi0.5Sb1.5Te3 with an excess of 1 wt% Te. We investigated the effect of film thickness, substrate temperature and post-annealing duration on the thermoelectric properties of the films. Our results show that the best power factor (2780 mu W/K(2)m at 300K) is obtained for films grown at room temperature and then post-annealed in vacuum at 300 degrees C for 16 h. This is among the highest power factor values reported for Bi0.5Sb1.5Te3 films grown on fused silica substrates. (C) 2014 Elsevier B.V. All rights reserved.
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