4.4 Review

Zinc oxide nanostructures and their applications

期刊

KOREAN JOURNAL OF CHEMICAL ENGINEERING
卷 28, 期 9, 页码 1797-1813

出版社

KOREAN INSTITUTE CHEMICAL ENGINEERS
DOI: 10.1007/s11814-011-0213-3

关键词

Zinc Oxide; Nanostructures; Growth Methods; Device Applications

资金

  1. Ministry of Education, Science and Technology (MEST) [2009-0082837, R31-2008-000-10100-0, 2010-0029707]
  2. National Research Foundation of Korea [2011-0028899, 2009-0082964] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Zinc oxide (ZnO) has been known as the next most important material for the fabrication of efficient nano-devices and nanosystems because of its versatile properties such as semiconducting, piezoelectric, and pyroelectric multiple properties. In this review, the state-of-the-art technologies related to the synthesis and characterization, the selective growth of ZnO nanostructures, and their applications for nanodevices are discussed. A special concern is focused on the controlled selective growth of ZnO nanostructures on wanted areas of substrates, which is crucial factor for devices applications. The device applications of ZnO nanostructures include field effect transistors (FETs), field-emission devices, piezoelectric nanogenerators, biosensors, p-n heterjunction diodes such as light-emitting diodes and photovoltaic cells, and so on.

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