期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 27, 期 6, 页码 2622-2627出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.3253652
关键词
electron beams; electron resists; shielding
资金
- A*STAR Singapore
- Alfaisal University
- King Abdulaziz City for Science and Technology
- Korean Ministry of Science and Technology (MOST)
- National Research Foundation of Korea [과C6A2003] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high initial development rate, which might be a more accurate assessment of developer performance than developer contrast. Finally, they showed that with a high-development-rate process, a short duration development of 15 s was sufficient to resolve high-resolution structures in 15-nm-thick resist, while a longer development degraded the quality of the structures with no improvement in the resolution.
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