期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 27, 期 3, 页码 1520-1526出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.3065991
关键词
carbon nanotubes; electron field emission; elemental semiconductors; nanolithography; nanowires; semiconductor quantum wires; silicon; sputter etching
Deep reactive ion etching (DRIE) is investigated as a tool for the realization of nanostructures and architectures, including nanopillars, silicon nanowires or carbon nanotubes on Si nanopillars, nanowalls, and nanonetworks. The potential of combining top-down fabrication methods with the bottom-up synthesis of one-dimensional nanocomponents is assessed. The field-emission properties of carbon nanotubes/Si pillars hybrid structures are measured, as well as the transport properties of large-area nanowires obtained via nanowire lithography. The potential of DRIE for the fabrication of three-dimensional nanostructures is also revealed.
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