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注意：仅列出部分参考文献，下载原文获取全部文献信息。Ultralow equivalent oxide thickness obtained for thin amorphous LaAlO3 layers grown on Si(001)
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APPLIED PHYSICS LETTERS (2007)
Development of robust interfaces based on crystalline γ-Al2O3(001) for subsequent deposition of amorphous high-κ oxides
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MICROELECTRONIC ENGINEERING (2007)
Comparison of modeling approaches for the capacitance-voltage and current-voltage characteristics of advanced gate stacks
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IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Pseudomorphic molecular beam epitaxy growth of γ-Al2O3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy
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APPLIED PHYSICS LETTERS (2006)
High dielectric constant gate oxides for metal oxide Si transistors
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The interface between single crystalline (001) LaAlO3 and (001) silicon
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Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy
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APPLIED PHYSICS LETTERS (2004)
High quality, high-k gate dielectric:: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer
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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2003)
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